Abstract: Recess gate etching is a critical technique for achieving enhancement-mode (E-mode) AlGaN/GaN high-electron mobility transistors (HEMTs) because the interface is susceptible to the etching ...
Abstract: Pentacene organic thin-film transistors (OTFTs) with HfLaON high-k gate dielectric have been fabricated using various gate-electrode materials, including different metals (Al, Au, Cu, Cr, Ti ...
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