Two 600-V N-channel super-junction MOSFETs from Alpha & Omega incorporate a body diode for robustness and fast reverse recovery. Based on the company’s aMOS5 technology, the AOK095A60FD (TO-247) and ...
LEIDEN, Netherlands, Aug. 25, 2017 (GLOBE NEWSWIRE) -- IXYS Corporation (NASDAQ:IXYS), a leader in power semiconductors and IC technologies for energy efficient products used in power conversion and ...
Lexington, Mass. – STMicroelectronics' FDmesh high-volt-age n-channel power MOSFETs are a follow-on to the company's existing MDmesh MOSFET technology, adding a body diode with a short recovery time.
The QRD3310001, QRC3310001, QRD3310002, and QRC3310002 dual fast-recovery diode modules specify a blocking voltage of 3.3V, maximum fast recovery time of 1.2 µs, and an isolation voltage of 6 kV.
The QRS1450001 and QRS171D001 recovery diode modules feature fast switching, H-Series free-wheel diodes and thermally conductive aluminum nitride isolation. They are isolated to accommodate mounting ...
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